IRFR2307ZTRR Datasheet, PDF (5/11 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

AUIRFR2307Z
4000
3000
2000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
20
ID= 32A
16
12
VDS= 60V
VDS= 38V
VDS= 15V
8
4
0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00
TJ = 175°C
1.00
0.10
0.2
TJ = 25°C
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
nce
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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