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IRFR2307ZTRR Datasheet, PDF (2/11 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology | |||
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AUIRFR2307Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75 âââ âââ V VGS = 0V, ID = 250µA
e âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.072 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 12.8 16 m⦠VGS = 10V, ID = 32A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 100µA
gfs
Forward Transconductance
30 âââ âââ S VDS = 25V, ID = 32A
IDSS
Drain-to-Source Leakage Current
âââ âââ 25 µA VDS = 75V, VGS = 0V
âââ âââ 250
VDS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
âââ 50 75
ID = 32A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
14
19
âââ
âââ
e nC VDS = 60V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 16 âââ
VDD = 38V
tr
Rise Time
âââ 65 âââ
ID = 32A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
44
29
âââ
âââ
e ns RG = 10 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
âââ 2190 âââ
âââ 280 âââ
âââ 150 âââ
âââ 1070 âââ
âââ 190 âââ
âââ 400 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 60V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 42
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 210
A showing the
integral reverse
âââ âââ 1.3
e p-n junction diode.
V TJ = 25°C, IS = 32A, VGS = 0V
âââ 31
âââ 31
47
47
e ns TJ = 25°C, IF = 32A, VDD = 38V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25°C, L = 0.197mH
RG = 25â¦, IAS = 32A, VGS =10V. Part not
recommended for use above this value.
 Pulse width ⤠1.0ms; duty cycle ⤠2%.
 Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
2
Â
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
 This value determined from sample failure population,
starting TJ = 25°C, L = 0.197mH, RG = 25â¦, IAS = 32A,
VGS =10V.
 When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
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