IRF7521D1 Datasheet, PDF (5/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

Power Mosfet Characteristics
IRF7521D1
1000
100
D = 0.50
0.20
10
0.10
0.05
P_DM
0.02
0.01
t₁
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t₁ / t ₂
0.1
0.00001
0.0001
0.001
0.01
2. Peak T _J = P _DM x Z _thJC + T_C
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.0
0.8
V_GS = 2.5V
0.6
0.4
0.2
VV_GS== 54..00V
0.0
A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
I _D , D rain C urrent (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
0.12
0.10
ID = 1.7A
0.08
0.06
0.04
A
0.0
2.0
4.0
6.0
8.0
V _{G S} , Gate-to-Source V oltage (V )
Fig 11. Typical On-Resistance Vs. Gate
Voltage
2014-8-8
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