IRF7521D1 Datasheet, PDF (1/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

IRF7521D1
Description
The new Micro8^TM package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8^TM
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8^TM will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
MOSFET / Schottky Diode
q _{Power MOSFET}
A
and Schottky Diode
A
q N-Channel HEXFET
q Low V_F Schottky Rectifier ^S
q Generation 5 Technology ^G
q Micro8^TM Footprint
1
8
2
7
3
6
4
5
Top View
K
V_DSS = 20V
K
D ^{RDS(on) = 0.135Ω}
D _{Schottky Vf = 0.39V}
Micro8^TM
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
Maximum
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 4.5V
2.4
I_D @ T_A = 70°C
1.9
I_DM
Pulsed Drain Current Œ
19
P_D @T_A = 25°C
Power Dissipation
1.3
P_D @T_A = 70°C
0.8
Linear Derating Factor
10
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
± 12
5.0
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient 
Maximum
100
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 9)
 I_SD ≤ 1.7A, di/dt ≤ 66A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
Ž Pulse width ≤ 300µs; duty cycle ≤ 2%
 Surface mounted on FR-4 board, t ≤ 10sec.
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
2014-8-8
1
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