KSM540 Datasheet, PDF (4/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KERSMI ELECTRONIC CO.,LTD.
KSM540
100V N-channel MOSFET
Fig. 5 - Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 6 - Typical Source-Drain
Diode Forward Voltage
Fig. 7 - Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 8 - Maximum Safe
Operating Area
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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