KSM540 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KERSMI ELECTRONIC CO.,LTD.
KSM540
100V N-channel MOSFET
Package Marking and Ordering Information
Part NO.
KSM540
Marking
KSM540
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
100 — — v
— — 25 μA
— — ±100 nA
2.0 — 4.0 V
— — 0.3 _Ω
VDS=2.5V,ID=5A
— — — ---
GFS
Forward Transconductance
VDS=5V,ID=12A
5.1 — — S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 670 —
— 250 — pF
— 60 —
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 10 — ns
tr
Rise Time
— 34 — ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
23
—
ns
tf
Fall Time
— 24 — ns
Qg
Total Gate Charge
— — 26 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
——
5.5 nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— — 11 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 2.5 V
trr
Reverse Recovery Time
— 150 280 ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 0.85 1.7 nC
www.kersemi.com
2