KSM3415 Datasheet, PDF (4/5 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KERSMI ELECTRONIC CO.,LTD.
KSM3415
150V N-channel MOSFET
Fig5.Typical Capacitance vs.
Voltage
Fig6.Typical Gate Charge vs. Drain-to-Source
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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