KSM3415 Datasheet, PDF (2/5 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3415
KERSMI ELECTRONIC CO.,LTD.
150V N-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
0.75
62
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM3415
Marking
KSM3415
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ
150 —
——
——
2.0 —
——
Max Units
—
v
— μA
±
nA
4.0 V
0.042 _Ω
VDS=2.5V,ID=5A
——
— ---
GFS
Forward Transconductance
VDS=5V,ID=12A
19 —
—
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V,VGS=0V,
— 2400 —
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
f=1MHz
— 640 — pF
— 340 —
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 12 — ns
tr
Rise Time
— 55 — ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
71
—
ns
tf
Fall Time
— 69 — ns
Qg
Total Gate Charge
— — 200 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
—
17
nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— — 98 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
1.3
V
trr
Reverse Recovery Time
— 260 390 ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 2.2 3.3 nC
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