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KSM2614 Datasheet, PDF (4/7 Pages) Kersemi Electronic Co., Ltd. – 200V N-Channel PowerTrench MOSFET
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KSM2614
Figure 7. Breakdown Voltage Variation vs.
Temperature
1.2
Figure 8. On-Resistance Variation vs. Tem-
perature
3.0
2.5
1.1
2.0
1.0
1.5
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250μA
-50
0
50
100
150
TJ, Junction Temperature [oC]
1.0
0.5
0.0
-100
* Notes :
1. VGS = 10V
2. ID = 31A
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current vs. Case-
Temperature
70
100
100 μs
10
1ms
1
Operation in This Area
is Limited by R DS(on)
10 ms
DC
0.1
0.01
1
* Notes :
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
400
VDS, Drain-Source Voltage [V]
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
100
0.5
10-1 0.2
0.1
0.05
0.02
10-2 0.01
Single pulse
10-3
10-5
10-4
PDM
t1
t2
* Notes :
1. ZθJC(t) = 0.48oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
2014-6-30
4
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