KSM2614 Datasheet, PDF (3/7 Pages) Kersemi Electronic Co., Ltd. – 200V N-Channel PowerTrench MOSFET

Figure 1. On-Region Characteristics
500
100
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10
1
0.1
* Notes :
1. 250μs Pulse Test
2. T_C = 25^oC
1
10
V_DS,Drain-Source Voltage[V]
Figure3.On-Resistance Variation vs.Drain
Current and Gate Voltage
0.06
* Note : T_J = 25^oC
0.05
0.04
V_GS = 10V
0.03
0.02
0.015
0
V_GS = 20V
50
100
150
200
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
9000
6000
C_iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C_oss
3000
0
0.1
C_rss
* Note:
1. V_GS = 0V
2. f = 1MHz
1
10
30
V_DS, Drain-Source Voltage [V]
KSM2614
Figure 2. Transfer Characteristics
1000
* Notes :
1. V_DS = 10V
2. 250μs Pulse Test
100
150^oC
10
1
2
-55^oC
25^oC
4
6
8
V_GS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage Varia-
tion vs. Source Current and Temperature
1000
* Notes :
1. V_GS = 0V
2. I_D = 250μA
100
T_A = 150^oC
T_A = 25^oC
10
1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
10
V_DS = 40V
V_DS = 100V
8
V_DS = 160V
6
4
2
* Note : I_D = 62A
0
0
20
40
60
80
100
Q_g, Total Gate Charge [nC]
2014-6-30
3
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