KSM13N06 Datasheet, PDF (4/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KERSMI ELECTRONIC CO.,LTD.
KSM13N06
60V N-channel MOSFET
Figure 5. Gate Charge Characteristics
Figure 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 7.Breakdown Voltage Variation
vs. Temperature
Figure 8.Maximum Safe Operating Area
Figure 9. Transient Thermal Response Curve
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