KSM13N06 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM13N06
KERSMI ELECTRONIC CO.,LTD.
60V
Symbol
Parameter
RƟJC
Thermal Resistance, Junction to Case1
RƟJA
Thermal Resistance ,Junction to Ambient1
N-channel MOSFET
Ratings Units
3.35
℃/W
62.5
Package Marking and Ordering Information
Part NO.
KSM13N06
Marking
KSM13N06
Package
TO-220N
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
60 —
—
v
——
1
μA
— — ±100 nA
2.0 —
4.0
V
— 0.105 0.135 _Ω
VDS=2.5V,ID=5A
——
— ---
GFS
Forward Transconductance
VDS=5V,ID=12A
— 5.1 —
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V,VGS=0V,
— 240 310
Coss
Output Capacitance
f=1MHz
— 90 120 pF
Crss
Reverse Transfer Capacitance
— 15 20
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
—5
20 ns
tr
Rise Time
— 25 60 ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
8
25 ns
tf
Fall Time
— 15 40 ns
Qg
Total Gate Charge
— 5.8 7.5 nC
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
2.0
—
nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— 2.5 — nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
1.5
V
trr
Reverse Recovery Time
— 39
—
ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 40 — nC
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