IRFR2407 Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A⑥)

4000
3000
2000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
IRFR/U2407
20
ID = 25A
16
12
V_DS = 60V
V_DS = 37V
V_DS = 15V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100 120
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
T_J = 25 ° C
V_GS = 0 V
1
0.4
0.8
1.2
1.6
2.0
2.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-23
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 175°C
Single Pulse
1
1
10
10ms
100
V_DS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.kersemi.com