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IRFR2407 Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A⑥) | |||
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IRFR/U2407
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance Â
Min. Typ. Max. Units
Conditions
75 âââ âââ
âââ 0.078 âââ
âââ 0.0218 0.026
2.0 âââ 4.0
V
V/°C
â¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A Â
VDS = 10V, ID = 250µA
27 âââ âââ S VDS = 25V, ID = 25A
âââ âââ 20
âââ âââ 250
µA VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
âââ âââ 200 nA VGS = 20V
âââ âââ -200
VGS = -20V
âââ 74 110
ID = 25A
âââ 13 19
âââ 22 34
nC VDS = 60V
VGS = 10VÂ
âââ 16 âââ
VDD = 38V
âââ 90 âââ ns ID = 25A
âââ 65 âââ
RG = 6.8â¦
âââ 66 âââ
VGS = 10V Â
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contact
S
âââ 2400 âââ
âââ 340 âââ
VGS = 0V
pF VDS = 25V
âââ 77 âââ
Æ = 1.0MHz, See Fig. 5
âââ 15700 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 220 âââ
âââ 220 âââ
VGS = 0V, VDS = 60V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 0.42mH
RG = 25â¦, IAS = 25A.
 ISD ⤠25A, di/dt ⤠290A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 42Â A showing the
integral reverse
G
âââ âââ 170
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 25A, VGS = 0V Â
âââ 100 150 ns TJ = 25°C, IF = 25A
âââ 400 600 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
 Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
2014-8-23
2
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