IRFB16N50K Datasheet, PDF (4/7 Pages) International Rectifier – SMPS MOSFET

IRFB16N50K, SiHFB16N50K
100000
10000
1000
100
10
V_GS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1
1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
12.0
10.0
ID= 17A
8.0
V_DS= 400V
V_DS= 250V
V_DS= 100V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
V_GS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
100
1000
10000
V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
4
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