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IRFB16N50K Datasheet, PDF (2/7 Pages) International Rectifier – SMPS MOSFET
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IRFB16N50K, SiHFB16N50K
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.44
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 Ab
VDS = 50 V, ID = 10 A
500
-
-
V
-
0.58
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
250
-
0.285 0.350 Ω
5.7
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
2210
-
VDS = 25 V,
-
240
-
f = 1.0 MHz
-
26
-
pF
VDS = 1.0 V, f = 1.0 MHz
-
2620
-
VGS = 0 V VDS = 400 V, f = 1.0 MHz
-
63
-
VDS = 0 V to 400 Vc
-
120
-
Total Gate Charge
Gate-Source Charge
Qg
-
60
89
Qgs
VGS = 10 V ID = 17 A, VDS = 400 Vb
-
18
27
nC
Gate-Drain Charge
Qgd
-
28
43
Turn-On Delay Time
td(on)
-
20
-
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 250 V, ID = 17 A,
RG = 8.8 Ω, VGS = 10 Vb
-
77
-
ns
-
38
-
Fall Time
tf
-
30
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
17
A
-
-
68
Body Diode Voltage
VSD
TJ = 25 °C, IS = 17 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
490
730
ns
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
Qrr
-
5710 8560 nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
2
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