KSM11P06 Datasheet, PDF (3/6 Pages) Kersemi Electronic Co., Ltd. – 60V P-Channel MOSFET

Typical Characteristics
KSM11P06
V_GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
10¹
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250µ s Pulse Test
2. T_C = 25℃
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.8
0.6
V_GS = - 10V
0.4
V_GS = - 20V
0.2
※ Note : T_J = 25℃
0.0
0
10
20
30
40
50
-I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
600
400
200
0
10^-1
C_oss
C_iss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
-V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
175℃
10⁰ 25℃
10^-1
2
-55℃
※ Notes :
1. V_DS = -30V
2. 250µ s Pulse Test
4
6
8
10
-V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
175℃ 25℃
※ Notes :
1. V_GS = 0V
2. 250µ s Pulse Test
10^-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = -30V
8
V_DS = -48V
6
4
2
※ Note : I_D = -11.4 A
0
0
2
4
6
8
10
12
14
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
2014-6-25
3
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