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KSM11P06 Datasheet, PDF (2/6 Pages) Kersemi Electronic Co., Ltd. – 60V P-Channel MOSFET
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KSM11P06
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-60
--
--
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = -250 µA, Referenced to 25°C -- -0.07
--
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
--
--
-1
--
--
-10
IGSSF
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
--
--
-100
IGSSR
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
--
--
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
V
VGS = -10 V, ID = -5.7 A
-- 0.14 0.175 Ω
VDS = -30 V, ID = -5.7 A (Note 4) --
5.1
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 420 550
pF
-- 195 250
pF
--
45
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -5.7 A,
RG = 25 Ω
--
6.5
25
ns
--
40
90
ns
--
15
40
ns
(Note 4, 5)
--
45
100
ns
VDS = -48 V, ID = -11.4 A,
--
13
17
nC
VGS = -10 V
--
2.0
--
nC
(Note 4, 5)
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- -11.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -45.6
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -11.4 A
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -11.4 A,
--
83
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.44mH, IAS = -11.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -11.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2014-6-25
2
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