IRF7201 Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7201
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
3.0V
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
T_J = 150°C
10
100
10
T_J = 150°C
1
T_J = 25°C
V_DS = 10V
20µs PULSE WIDTH
1
A
3.0
3.5
4.0
4.5
5.0
5.5
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
V_SD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
2014-8-8
3
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