IRF7201 Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7201
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V V_GS = 0V, I_D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, I_D = 1mA
R_DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.030
––– ––– 0.050
Ω
V_GS = 10V, I_D = 7.3A „
V_GS = 4.5V, I_D = 3.7A „
V_GS(th)
Gate Threshold Voltage
1.0 ––– ––– V V_DS = V_GS, I_D = 250µA
g_fs
Forward Transconductance
5.8 ––– ––– S V_DS = 15V, I_D = 2.3A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -20V
––– ––– 100
V_GS = 20V
Q_g
Total Gate Charge
––– 19 28
I_D = 4.6A
Q_gs
Gate-to-Source Charge
––– 2.3 3.5 nC V_DS = 24V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 6.3 9.5
V_GS = 10V, See Fig. 10 „
t_d(on)
Turn-On Delay Time
––– 7.0 –––
V_DD = 15V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 35 ––– _ns I_D = 4.6A
––– 21 –––
R_G = 6.2Ω
––– 19 –––
R_D = 3.2Ω, „
C_iss
Input Capacitance
––– 550 –––
V_GS = 0V
C_oss
Output Capacitance
––– 260 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 100 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 2.5
––– ––– 58
MOSFET symbol
showing the
A _{integral reverse}
p-n junction diode.
D
G
S
––– ––– 1.2 V T_J = 25°C, I_S = 4.6A, V_GS = 0V ƒ
––– 48 73 ns T_J = 25°C, I_F = 4.6A
––– 73 110 nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ V_DD = 15V, starting T_J = 25°C, L = 6.6mH
R_G = 25Ω, I_AS = 4.6A. (See Figure 8)
ƒ I_SD ≤ 4.6A, di/dt ≤ 120A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec
2014-8-8
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