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| FQP8N60C Datasheet, PDF (3/9 Pages) Kersemi Electronic Co., Ltd. – 600V N-Channel MOSFET | |||
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Top : 15V.0GSV
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
â» Notes :
1. 250µs PulseTest
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.5
3.0
2.5
VGS = 10V
2.0
1.5
VGS = 20V
1.0
â» Note : TJ = 25â
0.5
0
5
10
15
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
Ciss
Coss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
â» Notes ;
1.
2.
Vf =GS1=M0HVz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1.
2.
2V5D0S µ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1.
2.
2V5GS0µ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
â» Note : ID = 8A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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