FQP8N60C Datasheet, PDF (1/9 Pages) Kersemi Electronic Co., Ltd. – 600V N-Channel MOSFET

FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
• 7.5A, 600V, R_DS(on) = 1.2Ω @V_GS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP8N60C FQPF8N60C
600
7.5
7.5 *
4.6
4.6 *
30
30 *
± 30
230
7.5
14.7
4.5
147
48
1.18
0.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP8N60C
0.85
0.5
62.5
FQPF8N60C
2.6
--
62.5
Units
°C/W
°C/W
°C/W