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2N5060 Datasheet, PDF (3/7 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS
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2N5060 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(VAK = Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4)
(ITM = 1.2 A peak @ TA = 25°C)
Gate Trigger Current (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)
Gate Trigger Voltage (Continuous DC) (Note 5)
*(VAK = 7.0 Vdc, RL = 100 W)
*Gate Non−Trigger Voltage
(VAK = Rated VDRM, RL = 100 W) TC = 110°C
Holding Current (Note 5)
*(VAK = 7.0 Vdc, initiating current = 20 mA)
TC = 25°C
TC = −40°C
TC = 25°C
TC = −40°C
TC = 25°C
TC = −40°C
Turn-On Time
Delay Time
Rise Time
(IGT = 1.0 mA, VD = Rated VDRM,
Forward Current = 1.0 A, di/dt = 6.0 A/ms
Turn-Off Time
(Forward Current = 1.0 A pulse,
Pulse Width = 50 ms,
0.1% Duty Cycle, di/dt = 6.0 A/ms,
dv/dt = 20 V/ms, IGT = 1 mA)
2N5060, 2N5061
2N5062, 2N5064
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(Rated VDRM, Exponential)
3. RGK = 1000 W is included in measurement.
4. Forward current applied for 1 ms maximum duration, duty cycle p 1%.
5. RGK current is not included in measurement.
*Indicates JEDEC Registered Data.
Symbol
Min Typ Max Unit
IDRM, IRRM
−
−
−
10 mA
−
50 mA
VTM
−
−
1.7
V
IGT
mA
−
−
200
−
−
350
VGT
−
−
0.8
V
−
−
1.2
VGD
V
0.1
−
−
IH
−
−
5.0 mA
−
−
10
ms
td
−
3.0
−
tr
−
0.2
−
tq
ms
dv/dt
−
10
−
−
30
−
−
30
− V/ms
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
IRRM at VRRM
on state
VTM
IH
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
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