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| 2N5060 Datasheet, PDF (2/7 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS | |||
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2N5060 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffâState Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N5060
2N5061
2N5062
2N5064
VDRM,
V
VRRM
30
60
100
200
On-State Current RMS (180° Conduction Angles; TC = 80°C)
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
*Peak Non-repetitive Surge Current,
TA = 25°C
(1/2 cycle, Sine Wave, 60 Hz)
IT(RMS)
0.8
A
IT(AV)
A
0.51
0.255
ITSM
10
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
0.4
A2s
*Average On-State Current
(180° Conduction Angles)
(TC = 67°C)
(TC = 102°C)
IT(AV)
A
0.51
0.255
*Forward Peak Gate Power (Pulse Width v 1.0 msec; TA = 25°C)
PGM
0.1
W
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms)
PG(AV)
0.01
W
*Forward Peak Gate Current (Pulse Width v 1.0 msec; TA = 25°C)
IGM
1.0
A
*Reverse Peak Gate Voltage (Pulse Width v 1.0 msec; TA = 25°C)
VRGM
5.0
V
*Operating Junction Temperature Range
TJ
â40 to +110
°C
*Storage Temperature Range
Tstg
â40 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctionâtoâCase (Note 2)
RqJC
75
°C/W
Thermal Resistance, JunctionâtoâAmbient
RqJA
200
°C/W
*Lead Solder Temperature (Lead Length q 1/16â³ from case, 10 s Max)
â
+230*
°C
2. This measurement is made with the case mounted âflat side downâ on a heat sink and held in position by means of a metal clamp over the
curved surface.
*Indicates JEDEC Registered Data.
www.kersemi.com
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