KSM640 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM640
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Symbol
Parameter
Ratings Units
RƟJC
Thermal Resistance, Junction to Case1
2.89
℃/W
RƟJA
Thermal Resistance ,Junction to Ambient1
62.5
Package Marking and Ordering Information
Part NO.
KSM640
Marking
KSM640
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ
200 —
——
——
2.0 —
— 0.145
Max
—
10
±100
4.0
0.19
Units
v
μA
nA
V
Ω
VDS=2.5V,ID=5A
——
— ---
GFS
Forward Transconductance
VDS=5V,ID=12A
— 13 —
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V,VGS=0V,
— 1300 1700
Coss
Output Capacitance
f=1MHz
— 175 230 pF
Crss
Reverse Transfer Capacitance
— 45 60
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 20 50 ns
tr
Rise Time
— 145 300 ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 145
300
ns
tf
Fall Time
— 110 2300 ns
Qg
Total Gate Charge
— 45 230 nC
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
6.5
—
nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— 22 — nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
1.5
V
trr
Reverse Recovery Time
— 195 —
ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 1.47 — nC
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