KSM640 Datasheet, PDF (1/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM640
KERSMI ELECTRONIC CO.,LTD.
Description
200V N-channel MOSFET
This N-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
ID
200V
0.19Ω
180A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-220
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-1
Continuous Drain Current-T=100℃
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Power Dissipation4
Operating and Storage Junction Temperature
Range
Ratings
200
±20
18
11.4
72
250
139
-55 to
+150
Units
V
V
A
mJ
W
℃
Thermal Characteristics
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