KSM3315 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3315
KERSMI ELECTRONIC CO.,LTD.
150V N-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
1.1
62
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM3315
Marking
KSM3315
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
150 —
—
v
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
— — 25 μA
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
— ±100 nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
2.0
—
4.0
V
RDS(ON)
Drain-Source On Resistance²
VDS=10V,ID=6A
—
— 0.07 _Ω
VDS=2.5V,ID=5A
— — — ---
GFS
Forward Transconductance
VDS=5V,ID=12A
11.4 — — S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V,VGS=0V,
— 1300 —
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
f=1MHz
— 300 — pF
— 160 —
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 9.6 — ns
tr
Rise Time
— 32 — ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
49
— ns
tf
Fall Time
— 38 — ns
Qg
Total Gate Charge
— — 95 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
—
11 nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— — 47 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.3 V
trr
Reverse Recovery Time
— 174 260 ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 1.2 1.7 nC
www.kersemi.com
2