KSM3315 Datasheet, PDF (1/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3315
KERSMI ELECTRONIC CO.,LTD.
150V N-channel MOSFET
Description
This N-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
ID
150V
0.07Ω
27A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-220
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-1
Continuous Drain Current-T=100℃
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Power Dissipation4
Operating and Storage Junction Temperature
Range
Ratings
150
±20
27
19
108
350
136
-55 to
+175
Units
V
V
A
mJ
W
℃
Thermal Characteristics
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