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IRFR9120N Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – Ultra Low On-Resistance | |||
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IRFR/U9120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-100 âââ âââ V VGS = 0V, ID = -250µA
âââ -0.11 âââ V/°C Reference to 25°C, ID = -1mA
âââ âââ 0.48 ⦠VGS = -10V, ID = -3.9A Â
-2.0 âââ -4.0 V VDS = VGS, ID = -250µA
1.4 âââ âââ S VDS = -50V, ID = -4.0AÂ
âââ âââ -25 µA VDS = -100V, VGS = 0V
âââ âââ -250
VDS = -80V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 27
ID = -4.0A
âââ âââ 5.0
âââ âââ 15
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13 ÂÂ
âââ 14 âââ
VDD = -50V
âââ 47 âââ ns ID = -4.0A
âââ 28 âââ
RG = 12 â¦
âââ 31 âââ
RD =12 â¦, See Fig. 10 ÂÂ
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH
from package
G
âââ 7.5 âââ
and center of die contactÂ
S
âââ 350 âââ
VGS = 0V
âââ 110 âââ pF VDS = -25V
âââ 70 âââ
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ -6.6 A showing the
integral reverse
G
âââ âââ -26
p-n junction diode.
S
âââ âââ -1.6 V TJ = 25°C, IS = -3.9A, VGS = 0V Â
âââ 100 150 ns TJ = 25°C, IF = -4.0A
âââ 420 630 nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 13mH
RG = 25â¦, IAS = -3.9A. (See Figure 12)
 ISD ⤠-4.0A, di/dt ⤠300A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
 Uses IRF9520N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2014-8-14
2
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