English
Language : 

IRFR9020 Datasheet, PDF (2/8 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
◁
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, RG = 25 Ω, Peak IL = - 9.9 A
c. ISD ≤ - 9.9 A, dI/dt ≤ -120 A/µs, VDD ≤ 40 V, TJ ≤ 150 °C.
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
42
5.8
- 55 to + 150
300d
UNIT
W
V/ns
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
Case-to-Sink
RthCS
Maximum Junction-to-Case (Drain)
RthJC
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
3.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = max. rating, VGS = 0 V
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = 5.7 Ab
VDS ≤ - 50 V, IDS = - 5.7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 9
VGS = - 10 V
ID = - 9.7 A, VDS = 0.8 x max.
rating, see fig. 16
(Independent operating
temperature)
VDD = - 25 V, ID = - 9.7 A,
RG = 18 Ω, RD = 2.4 Ω, see fig. 15
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
D
G
S
MIN.
- 50
- 2.0
-
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
-
- 4.0
V
-
± 500 nA
-
250
µA
-
1000
0.20 0.28
Ω
3.5
-
S
490
-
320
-
pF
70
-
9.4
14
4.3
6.5
nC
4.3
6.5
8.2
12
57
66
ns
12
18
25
38
4.5
-
nH
7.5
-
www.kersemi.com
2
 ▷