IRFR9020 Datasheet, PDF (1/8 Pages) International Rectifier – REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 50
V_GS = - 10 V
14
6.5
6.5
Single
0.28
S
DPAK
IPAK
(TO-252)
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order As IRFR9020/SiHFR9020)
• Straight Lead Option (Order As IRFU9020/SiHFU9020) ^Available
• Repetitive Avalanche Ratings
RoHS*
• Dynamic dV/dt Rating
COMPLIANT
• Simple Drive Requirements
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020/SiHFR9020 is provided on 16mm tape. The
straight lead option IRFR9020/SiHFR9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9020PbF
SiHFR9020-E3
SnPb
Note
a. See device orientation.
IRFR9020
SiHFR9020
DPAK (TO-252)
IRFR9020TRPbF^a
SiHFR9020T-E3^a
IRFR9020TR^a
SiHFR9020T^a
DPAK (TO-252)
IRFR9020TRLPbF^a
SiHFR9020TL-E3^a
IRFR9020TRL^a
SiHFR9020TL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
* Pb containing terminations are not RoHS compliant, exemptions may apply
IPAK (TO-251)
IRFU9020PbF
SiHFU9020-E3
IRFU9020
SiHFU9020
LIMIT
- 50
± 20
- 9.9
- 6.3
- 40
0.33
440
- 9.9
4.2
UNIT
V
A
W/°C
mJ
A
mJ
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