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| IRFR6215TRL Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – AUTOMOTIVE GRADE | |||
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AUIRFR6215
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-150
âââ
âââ
âââ
âââ âââ
-0.20 âââ
âââ 0.295
âââ 0.58
V VGS = 0V, ID = -250µA
 V/°C Reference to 25°C, ID = -1mA
f ⦠VGS = -10V, ID = -6.6A
f VGS = -10V, ID = -6.6A TJ = 150°C
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-2.0 âââ -4.0
3.6 âââ âââ
h V VDS = VGS, ID = -250µA
S VDS = -50V, ID = -6.6A
IDSS
Drain-to-Source Leakage Current
âââ âââ -25 µA VDS = -150V, VGS = 0V
âââ âââ -250
VDS = -120V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
âââ âââ 66
ID = -6.6A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ âââ
âââ âââ
8.1
35
fh nC VDS =-120V
VGS = -10V, See Fig 6 and 13
td(on)
Turn-On Delay Time
âââ 14 âââ
VDD = -75V
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 36 âââ ns ID = -6.6A
âââ 53 âââ
âââ 37 âââ
fh RG = 6.8â¦
RD = 12â¦, See Fig. 10
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
âââ 7.5 âââ
G
from package
and center of die contact
S
Ciss
Input Capacitance
âââ 860 âââ
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
âââ 220 âââ
âââ 130 âââ
h pF VDS = -25V
Æ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ -13
âââ âââ -44
âââ âââ -1.6
MOSFET symbol
D
A showing the
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS =-6.6A, VGS = 0V
âââ 160 240
âââ 1.2 1.7
fh ns TJ = 25°C, IF =-6.6A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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