IRFR6215TRL Datasheet, PDF (1/10 Pages) Kersemi Electronic Co., Ltd. – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
PD-96302
Features
AUIRFR6215
HEXFET^® Power MOSFET
O P-Channel
O Low On-Resistance
O Dynamic dV/dT Rating
O 175°C Operating Temperature
G
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description
D
V_(BR)DSS
-150V
: ^R_DS(on) ^max. 0.295
S
I_D
-13A
D
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
S
D
G
ruggedized device design that HEXFET power MOSFETs
D-Pak
are well known for, provides the designer with an extremely
AUIRFR6215
efficient and reliable device for use in Automotive and a
wide variety of other applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
ch ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
dh Single Pulse Avalanche Energy (Thermally limited)
ch Avalanche Current
ch Repetitive Avalanche Energy
e Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
5.0
-55 to + 175
300
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Parameter
R_θJC
R_θJA
hj Junction-to-Case
i Junction-to-Ambient(PCB mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
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04/13/10