IRFR4105TRL Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – Advanced Planar Technology

AUIRFR4105
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V V_GS = 0V, I_D = 250μA
f ^{ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– ––– 45 _mΩ V_GS = 10V, I_D = 16A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
6.5 ––– ––– S V_DS = 25V, I_D = 16A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25 μA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– ––– 34
I_D = 16A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– ––– 6.8
––– ––– 14
f nC VDS = 44V
V_GS = 10V, See Fig. 6 & 13
t_d(on)
Turn-On Delay Time
––– 7.0 –––
V_DD = 28V
t_r
Rise Time
––– 49 –––
I_D = 16A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
31
40
–––
–––
f ns RG = 18Ω
R_D = 1.8Ω, See Fig. 10
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
C_iss
Input Capacitance
––– 700 –––
V_GS = 0V
C_oss
Output Capacitance
––– 240 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 100 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
I_S
Continuous Source Current
Min. Typ. Max. Units
Conditions
g ––– ––– 27
MOSFET symbol
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– 100
A showing the
integral reverse
––– ––– 1.6
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 16A, V_GS = 0V
–––
–––
57 86
130 200
f ^{ns TJ = 25°C, IF = 16A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 410μH
R_G = 25Ω, I_AS = 16A. (See Figure 12)
ƒ I_SD ≤ 16A, di/dt ≤ 420A/μs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C.
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
… Calculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
† R_θ is measured at Tj approximately 90°C.
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