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IRFR3707ZCPBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR/U3707ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Min. Typ. Max. Units
Conditions
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.023 âââ V/°C Reference to 25°C, ID = 1mA
e âââ 7.5 9.5 m⦠VGS = 10V, ID = 15A
âââ 10 12.5
e VGS = 4.5V, ID = 12A
1.35 1.80 2.25 V VDS = VGS, ID = 250µA
âââ -5.0 âââ mV/°C
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
71 âââ âââ
âââ 9.6 14
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 2.6 âââ
âââ 0.90 âââ
âââ 3.5 âââ
âââ 2.6 âââ
VDS = 15V
nC VGS = 4.5V
ID = 12A
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 4.4 âââ
Qoss
td(on)
Output Charge
Turn-On Delay Time
âââ 5.8 âââ nC VDS = 15V, VGS = 0V
âââ 8.0 âââ
e VDD = 16V, VGS = 4.5V
tr
Rise Time
âââ 11 âââ
ID = 12A
td(off)
Turn-Off Delay Time
âââ 12 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 3.3 âââ
Ciss
Input Capacitance
âââ 1150 âââ
VGS = 0V
Coss
Output Capacitance
âââ 260 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 120 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
42
12
5.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
2
f Min. Typ. Max. Units
Conditions
âââ âââ 56
MOSFET symbol
D
âââ âââ 220
âââ âââ 1.0
âââ 25 38
âââ 17 26
A showing the
integral reverse
G
p-n junction diode.
S
e V TJ = 25°C, IS = 12A, VGS = 0V
e ns TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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