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| IRFR3707ZCPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 96045
IRFR3707ZCPbF
IRFU3707ZCPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V
9.5m: 9.6nC
D-Pak
I-Pak
IRFR3707ZCPbF IRFU3707ZCPbF
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
gà Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
Max.
30
± 20
56f
39f
220
50
25
0.33
-55 to + 175
300 (1.6mm from case)
Typ.
âââ
âââ
âââ
Max.
3.0
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
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1
06/22/06
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