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| IRFR3504ZPBF Datasheet, PDF (2/11 Pages) International Rectifier – AUTOMOTIVE MOSFET | |||
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IRFR/U3504ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.032 âââ
âââ 8.23 9.0
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 42A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
32 âââ âââ S VDS = 10V, ID = 42A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 40V, VGS = 0V
âââ âââ 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 30 45
ID = 42A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
9.6
12
âââ
âââ
e nC VDS = 32V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 15 âââ
VDD = 20V
tr
Rise Time
âââ 74 âââ
ID = 42A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
30
38
âââ
âââ
e ns RG = 15 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 1510 âââ
âââ 340 âââ
âââ 190 âââ
âââ 1100 âââ
âââ 340 âââ
âââ 460 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 32V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 42
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 310
A showing the
integral reverse
âââ âââ 1.3
âââ 18 27
âââ 9.2 14
e p-n junction diode.
V TJ = 25°C, IS = 42A, VGS = 0V
e ns TJ = 25°C, IF = 42A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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