IRFR3504ZPBF Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
PD - 95521A
IRFR3504ZPbF
IRFU3504ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 9.0mΩ
I_D = 42A
S
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR3504Z
I-Pak
IRFU3504Z
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù I_AR
Avalanche Current
g E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
77
54
42
310
90
0.60
± 20
77
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.66
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
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1/17/05