IRFR2607ZTRR Datasheet, PDF (2/11 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

AUIRFR2607Z
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
gfs
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
75 ––– –––
––– 0.074 –––
––– 17.6 22
2.0 ––– 4.0
36 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
V VGS = 0V, ID = 250µA
e ^{V/°C Reference to 25°C, ID = 1mA}
mΩ ^VGS ^{= 10V, I}D ^{= 30A}
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 30A
µA ^{VDS = 75V, VGS = 0V}
V_DS = 75V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 20V}
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 34 51
I_D = 30A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
8.9
14
–––
–––
e nC VDS = 60V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 14 –––
V_DD = 38V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
––– 59 ––– _ns ID = 30A
––– 39 –––
––– 28 –––
e ^{RG = 15 Ω}
V_GS = 10V
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
––– 7.5 –––
from package
and center of die contact
C_iss
Input Capacitance
––– 1440 –––
V_GS = 0V
C_oss
Output Capacitance
––– 190 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 110 –––
ƒ = 1.0MHz
pF
C_oss
Output Capacitance
––– 720 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
C_oss
C_oss eff.
Output Capacitance
Effective Output Capacitance
––– 130 –––
––– 230 –––
f ^{VGS = 0V, VDS = 60V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
30
28
Max. Units
Conditions
k 45
180
1.3
MOSFET symbol
showing the
A
integral reverse
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 30A, V_GS = 0V
45
42
e ^{ns TJ = 25°C, IF = 30A, VDD = 38V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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