IRFR2607ZTRR Datasheet, PDF (1/11 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

AUIRFR2607Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D
V_(BR)DSS
75V
R_DS(on) typ. 17.6m_Ω
G
max. 22mΩ
I_{D (Silicon Limited)}
S
45A k
I_{D (Package Limited)}
42A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
D
S
D
G
D-Pak
AUIRFR2607Z
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
45 k
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
32
A
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
42
180
P_D @T_C = 25°C Power Dissipation
110
W
Linear Derating Factor
0.72
W/°C
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
± 20
V
96
mJ
96
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.38
50
110
Units
°C/W
www.kersemi.com
1
08/24/10