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IRFR024N Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – Ultra Low On-Resistance | |||
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IRFR/U024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
55 âââ âââ
âââ 0.052 âââ
âââ âââ 0.075
2.0 âââ 4.0
4.5 âââ âââ
âââ âââ 25
âââ âââ 250
âââ âââ 100
âââ âââ -100
âââ âââ 20
âââ âââ 5.3
âââ âââ 7.6
âââ 4.9 âââ
âââ 34 âââ
âââ 19 âââ
âââ 27 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 370 âââ
âââ 140 âââ
âââ 65 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A Â
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10AÂ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 10A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 28V
ID = 10A
RG = 24â¦
RD = 2.6â¦, See Fig. 10 Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contactÂ
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 17 Â
A
showing the
integral reverse
G
âââ âââ 68
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 10A, VGS = 0V Â
âââ 56 83 ns TJ = 25°C, IF = 10A
âââ 120 180 nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25â¦, IAS = 10A. (See Figure 12)
 ISD ⤠10A, di/dt ⤠280A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
 Uses IRFZ24N data and test conditions.
2014-8-15
2
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