IRF9Z34N Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

AUIRF9Z34N
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage -55 ––– ––– V V_GS = 0V, I_D = -250μA
f ^{ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C Reference to 25°C, ID = -1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.10 Ω V_GS = -10V, I_D = -10A
V_GS(th)
Gate Threshold Voltage
-2.0 ––– -4.0 V V_DS = V_GS, I_D = -250μA
gfs
Forward Transconductance
4.2 ––– ––– S V_DS = -25V, I_D = -10A
I_DSS
Drain-to-Source Leakage Current
––– ––– -25 μA V_DS = -55V, V_GS = 0V
––– ––– -250
V_DS = -44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– ––– 35
I_D = -10A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– –––
––– –––
79
16
f nC VDS = -44V
V_GS = -10V, See Fig. 6 & 13
t_d(on)
Turn-On Delay Time
––– 13 –––
V_DD = -28V
t_r
Rise Time
––– 55 –––
I_D = -10A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
30
41
–––
–––
f ns RG = 13Ω
R_D = 2.6Ω, See Fig. 10
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
and center of die contact
S
C_iss
Input Capacitance
––– 620 –––
V_GS = 0V
C_oss
Output Capacitance
––– 280 ––– pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– -19
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– -68
integral reverse
G
––– ––– -1.6
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = -10A, V_GS = 0V
–––
–––
54 82
110 160
f ^{ns TJ = 25°C, IF = -10A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-11
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