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| IRF9Z34N Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) | |||
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Features
l Advanced Planar Technology
l P-Channel MOSFET
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF9Z34N
TO-220AB
AUIRF9Z34N
V(BR)DSS
RDS(on) max.
ID
-55V
0.10Ω
-19A
D
G
S
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
c Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
g Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
-19
-14
-68
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
y y 300
10 lbf in (1.1N m)
Typ.
âââ
0.50
âââ
Max.
2.2
âââ
62
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
2014-8-11
1
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