AO3418 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_J=25°C unless otherwise noted)
KSM3418,KSM3418L
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
30
I_DSS
Zero Gate Voltage Drain Current
V_DS=24V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±12V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1
I_D(ON)
On state drain current
V_GS=4.5V, V_DS=5V
15
V_GS=10V, I_D=3.8A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=4.5V, I_D=3.5A
T_J=125°C
V_GS=2.5V, I_D=1A
g_FS
Forward Transconductance
V_DS=5V, I_D=3.8A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
V_GS=4.5V, V_DS=15V, I_D=3.8A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=15V, R_L=3.9Ω,
R_GEN=6Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=3.8A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=3.8A, dI/dt=100A/µs}
Typ
0.001
1.4
43
64
52
101
11.7
0.81
226
39
29
1.4
3
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
Max
1
5
100
1.8
60
85
70
155
1
2.5
270
1.7
3.6
4
5
22
3
13
5
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
2014-5-29
2
www.kersemi.com