AO3418 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

Features
V_DS (V) = 30V
I_D = 3.8 A
R_DS(ON) < 60mΩ (V_GS = 10V)
R_DS(ON) < 70mΩ (V_GS = 4.5V)
R_DS(ON) < 155mΩ (V_GS = 2.5V)
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
TO-236 _{Top View}
(SOT-23)
General Description
The AO3418 uses advanced trench technology to
provide excellent R_DS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
3.8
3.1
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
80
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-29
1
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