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AO3400A Datasheet, PDF (2/5 Pages) Alpha Industries – N-Channel Enhancement Mode Field Effect Transistor
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Electrical Characteristics (TJ=25°C unless otherwise noted)
KSM3400A
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.65 1.05 1.45 V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=5.7A
VGS=4.5V, ID=5A
TJ=125°C
18 26.5
mΩ
28
38
19
32 mΩ
VGS=2.5V, ID=3A
24
48 mΩ
gFS
Forward Transconductance
VDS=5V, ID=5.7A
33
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
1
V
IS
Maximum Body-Diode Continuous Current
2
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
630
pF
75
pF
50
pF
1.5
3
4.5
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
6
7
nC
Qgs
Gate Source Charge
VGS=4.5V, VDS=15V, ID=5.7A
1.3
nC
Qgd
Gate Drain Charge
1.8
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.6Ω,
2.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
25
ns
tf
Turn-Off Fall Time
4
ns
trr
Body Diode Reverse Recovery Time IF=5.7A, dI/dt=100A/µs
8.5
ns
Qrr
Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/µs
2.6
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2014-5-26
2
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