AO3400A Datasheet, PDF (1/5 Pages) Alpha Industries – N-Channel Enhancement Mode Field Effect Transistor

Product summary
V_DS
I_D (at VGS^=10V)
R DS(ON)(at V GS=10V)
R DS(ON() at V GS = 4.5V)
R DS(ON() at V GS = 2.5V)
30V
5.7A
< 26.5mΩ
< 32mΩ
< 48mΩ
AO3400A
30V N-Channel MOSFET
SOT23
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General Descrlptlon
The AO3400A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_{DS(ON). This device is suitable for use as a}
load switch or in PWM applications.
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
5.7
4.7
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
70
100
Maximum Junction-to-Lead
Steady-State
R_θJL
63
Max
90
125
80
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-26
1
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