03P4MG Datasheet, PDF (2/5 Pages) NEC – 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR

03P4MG,03P6MG
ELECTRICAL CHARACTERISTICS (Tj = 25°C, RGK = 1 kΩ)
Parameter
Symbol
Conditions
Specifications
Unit
Remarks
MIN. TYP. MAX.
Non-repetitive Peak Reverse
IRRM VRM = VRRM
Tj = 25°C
−
−
10 µA
−
Current
Tj = 125°C
−
− 100 µA
−
Non-repetitive Peak Off-state
IDRM VDM = VDRM
Tj = 25°C
−
−
10 µA
−
Current
Tj = 125°C
−
− 100 µA
−
Critical Rate-of-rise of Off-state dVD/dt Tj = 125°C, VDM = ² VDRM
10
−
− V/µs
−
3
Voltage
On-state Voltage
Gate Trigger Current
VT IT = 4 A
IGT VDM = 6 V, RL = 100 Ω
−
−
2.2
V
Refer to Figure 1.
3
−
50 µA
−
Gate Trigger Voltage
VGT VDM = 6 V, RL = 100 Ω
−
−
0.8
V
−
Gate Non-trigger Voltage
VGD
Tj = 125°C, VDM = ^VDRM
0.2
−
−
V
−
2
Holding Current
IH
VDM = 24 V, ITM = 4 A
−
−
5 mA
−
Turn-off Time
tq Tj = 125°C, IT = 200 mA,
−
60
−
µs
−
dIR/dt = 15 A/µs, VR ≥ 25 V,
VDM
=
2
3
VDRM,
dVD/dt
=
10
V/µs
Thermal Resistance
Rth(j-C) Junction-to-case DC
−
−
50 °C/W Refer to Figure 14.
Rth(j-A) Junction-to-ambient DC
−
− 230 °C/W Refer to Figure 14.
TYPICAL CHARACTERISTICS (TA = 25°C)
10000
Figure 1. iT vs. υT Characteristics
MAX.
1000
Tj = 125˚C
100
25˚C
10
0
1
2
3
On-state Voltage υT (V)
14
12
10
8
6
4
2
0
1
Figure 2. ITSM Rating
At initial, Tj = 125˚C
ITSM
10 ms 20 ms
5
10
Cycles (N)
50 100
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