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03P4MG Datasheet, PDF (1/5 Pages) NEC – 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR | |||
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03P4MG,03P6MG
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
⢠400 and 600 V high-withstanding-voltage series of products
⢠The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
⢠High-sensitivity thyristor (IGT = 3 to 50 µA)
⢠Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
PACKAGE DRAWING (Unit: mm)
Ï 5.2 MAX.
Electrode connection
1: Gate
2: Anode
3: Cathode
0.5
1.27
*TC test bench-mark
Standard weight: 0.3 g
2.54
123
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
03P4MG
03P6MG
Non-repetitive Peak Reverse Voltage
VRSM
700
700
Non-repetitive Peak Off-state Voltage
VDSM
700
700
Repetitive Peak Reverse Voltage
VRRM
400
600
Repetitive Peak Off-state Voltage
VDRM
400
600
Average On-state Current
IT(AV) 300 (TA = 30°C, Single half-wave, θ = 180°)
Effective On-state Current
5 Surge On-state Current
Fusing Current
IT(RMS)
ITSM
â« iT2dt
470
8 (f = 50 Hz, Sine half-wave, 1 cycle)
0.15 (1 ms ⤠t ⤠10 ms)
Critical Rate of On-state Current of Rise dIT/dt
20
Peak Gate Power Dissipation
PGM
100 (f ⥠50 Hz, Duty ⤠10%)
Average Gate Power Dissipation
PG(AV)
10
Peak Gate Forward Current
IFGM
100 (f ⥠50 Hz, Duty ⤠10%)
Peak Gate Reverse Voltage
VRGM
6
Junction Temperature
Tj
â40 to +125
Storage Temperature
Tstg
â55 to +150
Unit
Remarks
V
RGK = 1 kâ¦
V
RGK = 1 kâ¦
V
RGK = 1 kâ¦
V
RGK = 1 kâ¦
mA Refer to Figure 10.
mA
â
A Refer to Figure 2.
A2s
â
A/µs
â
mW Refer to Figure 3.
mW Refer to Figure 3.
mA
â
V
â
°C
â
°C
â
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