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| KHB4D0N80P1 Datasheet, PDF (6/7 Pages) KEC(Korea Electronics) – N CHANNEL MOS FIELD EFFECT TRANSISTOR | |||
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KHB4D0N80P1/F1/F2
- Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
ID
1.0 mA
VDS
Q
Qgs
Qgd
VGS
Qg
- Single Pulsed Avalanche Energy
0.5 VDSS
25â¦
10 V
VGS
BVDSS
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
L
IAS
VDS
VDD
ID(t)
tp
VDS(t)
Time
2007. 9. 10
Revision No : 0
6/7
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